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  this is information on a product in full production. march 2014 docid026036 rev 1 1/36 A22H165 high-performance class-g stereo headphone amplifier datasheet - production data features ? power supply range: 2.3 v to 4.8 v ? 0.6 ma/channel quiescent current ? 2.1 ma current consumption with 100 w/channel (10 db crest factor) ? 0.006% typical thd+n at 1 khz ? 100 db typical psrr at 217 hz ? 100 db of snr a-weighted at g = 0 db ? zero "pop and click" ? gain settings: 0 db and 6 db ? integrated high efficien cy step-down converter ? low standby current: 5 a max ? output-coupling capacitors removed ? thermal shutdown ? flip-chip package: 1.65 mm x 1.65 mm, 400 m pitch, 16 bumps applications ? cellular / smart phones ? portable media player ? wearable ? fitness and healthcare description the A22H165 is a class-g stereo headphone driver dedicated to high-performance audio, high power efficiency and space-constrained applications. it is based on the core technology of a low power dissipation am plifier combined with a high efficiency step-down dc-dc converter for supplying this amplifier. when powered by a battery, the internal step down dc-dc converter generates the appropriate voltage to the amplifier depending on the amplitude of the audio signal to supply the headsets. it achieves a total 2.1 ma current consumption at 100 w output power (10 db crest factor). thd+n is 0.02 % maximum at 1 khz and psrr is 100 db at 217 hz, which ensures a high audio quality of the device in a wide range of environments. the traditionally bulky output coupling capacitors can be removed. a dedicated common-mode sense pin removes parasitic ground noise. the A22H165 is designed to be used with an output serial resistor. it ensures uncondit ional stability over a wide range of capacitive loads. the A22H165 is packaged in a tiny 16-bump flip-chip package with a pitch of 400 m. top view avdd sw inl- c1 cms en agnd c2 hpvdd voutl voutr inl+ inr+ pvss gain inr- 4321 a b c d A22H165 - flip-chip pinout (top view) balls are undemeath table 1. device summary order code temperature range package packing marking A22H165 -40c to +85c flip-chip tape & reel 21 www.st.com
contents A22H165 2/36 docid026036 rev 1 contents 1 absolute maximum ratings and operating c onditions . . . . . . . . . . . . . 3 2 typical application sche matic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.1 gain control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.2 overview of the class-g, 2-level headphone amplifier . . . . . . . . . . . . . . . 22 4.3 external component selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.3.1 step-down inductor selection (l1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.3.2 step-down output capacitor selection (c t ) . . . . . . . . . . . . . . . . . . . . . . . 24 4.3.3 full capacitive inverter capacitors selection (c12 and c ss ) . . . . . . . . . 25 4.3.4 power supply decoupling capacitor selection (cs) . . . . . . . . . . . . . . . . 25 4.3.5 input coupling capacitor selection (c in ) . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.3.6 low-pass output filter (r out and c out ) and iec 61000-4-2 esd protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.3.7 integrated input low-pass filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.4 single-ended input configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.4.1 layout recommendations for single-ended operation . . . . . . . . . . . . . . 28 4.5 startup phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.5.1 auto zero technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.5.2 input impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.6 layout recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.6.1 common-mode sense layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
docid026036 rev 1 3/36 A22H165 absolute maximum ratings and operating conditions 36 1 absolute maximum ratings and operating conditions table 2. absolute maximum ratings symbol parameter value unit v cc supply voltage (1) during 1 ms. 1. all voltage values are measured with respect to the ground pin. 5.5 v v in+ ,v in- input voltage referred to ground +/- 1.2 v control input voltage en, gain -0.3 to vdd v t stg storage temperature -65 to +150 c t j maximum junction temperature (2) 2. thermal shutdown is activated when maximum junction temperature is reached. 150 c r thja thermal resistance junction to ambient (3) 3. the device is protected from over temperature by a thermal shutdown mechanism, active at 150 c. 200 c/w p d power dissipation internally limited (4) 4. exceeding the power derating curves for long periods may provoke abnormal operation. esd human body model (hbm) (5) all pins voutr, voutl vs. agnd 5. human body model: a 100 pf capacitor is charged to the specified voltage, then discharged through a 1.5 k ?? resistor between two pins of the device. this is done for all couples of connected pin combinations while the other pins are floating. 2 4 kv machine model (mm), min. value (6) 6. machine model: a 200 pf capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 ? ). this is done for all couples of connected pin combinations whil e the other pins are floating. 100 v charge device model (cdm) all pins voutr, voutl 500 750 v iec61000-4-2 level 4, contact (7) iec61000-4-2 level 4, air discharge (7) 7. the measurement is performed on an evaluati on board, with esd protection emif02-av01f3. +/- 8 +/- 15 kv lead temperature (soldering, 10 sec) 260 c
absolute maximum ratings and operating conditions A22H165 4/36 docid026036 rev 1 table 3. operating conditions symbol parameter value unit v cc supply voltage 2.3 to 4.8 v hpvdd internal step-down dc output voltages high rail voltage low rail voltage 1.9 1.2 v en,gain input voltage low level 0.6 v max v en,gain input voltage high level 1.3 v min r l load resistor ?? 16 ? c l load capacitor serial resistor of 12 ?? minimum ?? r l ? 16 ? 0.8 to 100 nf t oper operating free air temperature range -40 to +85 c r thja flip-chip thermal resistance junction to ambient 90 c/w
docid026036 rev 1 5/36 A22H165 typical application schematic 36 2 typical application schematic figure 1. typical application schematic for the A22H165 table 4. A22H165 pin description pin n pin name pin definition a1 sw switching node of the buck converter a2 avdd analog supply voltage, connect to battery a3 voutl output signal for left audio channel a4 inl- negative input signal for left audio channel b1 agnd device ground b2 c1 flying capacitor terminal for internal negative supply generator b3 hpvdd buck converter output, power supply for amplifier b4 inl+ positive input signal for left audio channel c1 c2 flying capacitor terminal for internal negative supply generator c2 pvss negative supply generator output c3 cms common-mode sense, to be connected as close as possible to the ground of headphone/line out plug c4 inr+ positive input signal for right audio channel d1 en amplifier enable d2 gain amplifier gain select d3 voutr output signal for right audio channel d4 inr- negative input signal for right audio channel rout 12 ohms min. rout 12 ohms min. cout 0.8 nf min. cout 0.8 nf min. cin 1 uf cin 1 uf cin 1 uf cin 1 uf 1 2 3 j1 c12 2.2 uf cs 2.2 uf css 2.2 uf ct 10 uf l1 3.3 uh vbat + - + - negative supply positive supply agnd c1 c2 en gain avdd inl- inl+ inr+ inr- voutl voutr cms level detector level detector sw hpvdd pvss negative left input positive left input negative right input positive right input am06119 interface
typical application schematic A22H165 6/36 docid026036 rev 1 table 5. A22H165 component description component (1) value description cs 2.2 f decoupling capacitors for v cc . a 2.2 f capacitor is sufficient for proper decoupling of the A22H165. an x5r dielectric and 10 v rating voltage is recommended to minimize ? c/ ? v when v cc =4.8v. must be placed as close as possible to the A22H165 to minimize parasitic inductance and resistance. c12 2.2 f capacitor for internal negative power supply operation. an x5r dielectric and 6.3 v rating voltage is recommended to minimize ? c/ ? v when hpvdd = 1.9 v. must be placed as close as possible to the A22H165 to minimize parasitic inductance and resistance. c ss 2.2 f filtering capacitor for internal negative power supply. an x5r dielectric and 6.3 v rating voltage is recommended to minimize ? c/ ? v when hpvdd = 1.9 v. c in input coupling capacito r that forms with r in ? r indiff /2 a first-order high-pass filter with a -3 db cut-off frequency fc. c out 0.8 to 100 nf output capacitor of 0.8 n f minimum to 100 nf maximu m. this capacitor is mandatory for operation of the A22H165. r out 12 ? min. output resistor in-series with the A22H165 output. this 12 ? minimum resistor is mandatory for operation of the A22H165. l1 3.3 h inductor for internal dc-dc step-down converter. references of inductors: refer to section 4.3.1 for more information. c t 10 f tank capacitor for internal dc-dc step-down converter. an x5r dielectric and 6.3 v rating voltage is recommended to minimize ? c/ ? v when hpvdd = 1.9 v. refer to section 4.3.2 for more information. 1. refer to section 4.3 for a complete description of each component. cin 1 2 ? rin fc ? ? ? ------------------------------------------ =
docid026036 rev 1 7/36 A22H165 electrical characteristics 36 3 electrical characteristics the values given in the following table are for the conditions v cc = +3.6 v, agnd = 0 v, gain = 0 db, r l = 32 ? + 15 ? , t amb = 25 c, unless otherwise specified. table 6. electrical characteristics of the amplifier symbol parameter min. typ. max. unit i cc quiescent supply current, no input signal, both channels enabled 1.2 1.5 ma i s supply current, with input modulation, both channels enabled, hpvdd = 1.2 v, output power per channel, f = 1 khz pout = 100 w at 3 db crest factor pout = 500 w at 3 db crest factor pout = 1 mw at 3 db crest factor pout = 100 w at 10 db crest factor pout = 500 w at 10 db crest factor pout = 1 mw at 10 db crest factor 2.3 3.7 4.7 2.1 3.1 3.9 3.5 5 6.5 ma i stby standby current, no input signal, v en = 0 v, v gain = 0v 0.6 5 a v in input differential voltage range (1) 1v rms v oo output offset voltage no input signal -500 +500 v v out maximum output voltage, in-phase signals r l = 16 ??? thd+n = 1% max, f = 1 khz r l = 47 ??? thd+n = 1% max, f = 1 khz r l = 10 k ???? s ???????? c l = 1 nf ?? thd+n = 1% max, f = 1 khz 0.6 1.0 1.0 0.8 1.1 1.3 v rms thd+n total harmonic distortion + noise, g = 0 db v out = 700 mvrms, ? f = 1 khz v out = 700 mvrms, 20 hz < f < 20 khz 0.006 0.05 0.02 % psrr power supply rejection ratio (1) , v ripple = 200 mv pp , grounded inputs f = 217 hz, g = 0 db, r l ? 16 ? f = 10 khz, g = 0 db, r l ? 16 ? 90 100 70 db cmrr common mode rejection ratio f = 1 khz ?? g = 0 db, v ic = 200 mv pp f = 20 hz to 20 khz ?? g = 0 db, v ic = 200 mv pp 65 45 db crosstalk channel separation r l = 32 ?? + 15 ???? g = 0 db, f = 1 khz, p o = 10 mw 60 100 db snr signal-to-noise ratio, a-weighted, v out = 1 v rms , thd+n < 1%, f = 1 khz (1) g = +0 db 100 db onoise output noise voltage, a-weighted (1) g = +0 db 9 vrms
electrical characteristics A22H165 8/36 docid026036 rev 1 av closed loop voltage gain, gain=l 0 db closed loop voltage gain, gain=h 6 db dav gain matching between left and right channels -0.5 +0.5 db r indiff differential input impedance at 6 db 24 33.2 k ? v il low level input voltage on en, gain pins 0.6 v v ih high level input voltage on en, gain pins 1.3 v i in input current on en,gain 10 a 1. guaranteed by design and parameter correlation. table 6. electrical characteristi cs of the amplifier (continued) symbol parameter min. typ. max. unit
docid026036 rev 1 9/36 A22H165 electrical characteristics 36 figure 2. current consumption vs. power supply voltage figure 3. standby current consumption vs. power supply voltage figure 4. maximum output power vs. power supply voltage, r l = 16 ? figure 5. maximum output power vs. power supply voltage, r l = 32 ? figure 6. maximum output power vs. power supply voltage, r l = 47 ? figure 7. current consumption vs. total output power, r l = 16 ?
electrical characteristics A22H165 10/36 docid026036 rev 1 figure 8. current consumption vs. total output power, r l = 32 ? figure 9. current consumption vs. total output power, r l = 47 ? figure 10. differential input impedance vs . gain figure 11. thd+n vs. output power - r l = 16 ??? in-phase, v cc = 2.5 v figure 12. thd+n vs. output power - r l = 16 ??? out-of-phase, v cc = 2.5 v figure 13. thd+n vs. output power - r l = 16 ??? in-phase, v cc = 3.6 v
docid026036 rev 1 11/36 A22H165 electrical characteristics 36 figure 14. thd+n vs. output power - r l = 16 ??? out-of-phase, v cc = 3.6 v figure 15. thd+n vs. output power - r l = 16 ??? in-phase, v cc = 4.8 v figure 16. thd+n vs. output power - r l = 16 ??? out-of-phase, v cc = 4.8 v figure 17. thd+n vs. output power - r l = 32 ??? in-phase, v cc = 2.5 v figure 18. thd+n vs. output power - r l = 32 ??? out-of-phase, v cc = 2.5 v figure 19. thd+n vs. output power - r l = 32 ??? in-phase, v cc = 3.6 v
electrical characteristics A22H165 12/36 docid026036 rev 1 figure 20. thd+n vs. output power - r l = 32 ??? out-of-phase, v cc = 3.6 v figure 21. thd+n vs. output power - r l = 32 ??? in-phase, v cc = 4.8 v figure 22. thd+n vs. output power - r l = 32 ? , out-of-phase, v cc = 4.8 v figure 23. thd+n vs. output power - r l = 32 ?? +ipad ?? in-phase, v cc = 2.5 v figure 24. thd+n vs. output power - r l = 32 ?? +ipad ?? out-of-phase, v cc = 2.5 v figure 25. thd+n vs. output power - r l = 32 ?? +ipad ?? in-phase, v cc = 3.6 v
docid026036 rev 1 13/36 A22H165 electrical characteristics 36 figure 26. thd+n vs. output power - r l = 32 ?? +ipad ?? out-of-phase, v cc = 3.6 v figure 27. thd+n vs. output power - r l = 32 ?? +ipad ?? in-phase, v cc = 4.8 v figure 28. thd+n vs. output power - r l = 32 ?? +ipad ?? out-of-phase, v cc = 4.8 v figure 29. thd+n vs. output power - r l = 47 ??? in-phase, v cc = 2.5 v figure 30. thd+n vs. output power - r l = 47 ??? out-of-phase, v cc = 2.5 v figure 31. thd+n vs. output power - r l = 47 ??? in-phase, v cc = 3.6 v
electrical characteristics A22H165 14/36 docid026036 rev 1 figure 32. thd+n vs. output power - r l = 47 ??? out-of-phase, v cc = 3.6 v figure 33. thd+n vs. output power - r l = 47 ??? in-phase, v cc = 4.8 v figure 34. thd+n vs. output power - r l = 47 ? , out-of-phase, v cc = 4.8 v figure 35. thd+n vs. frequency, r l = 16 ? , in- phase, v cc = 2.5 v figure 36. thd+n vs. frequency, r l = 16 ? , out- of-phase, v cc = 2.5 v figure 37. thd+n vs. frequency, r l = 16 ? , in- phase, v cc = 3.6 v
docid026036 rev 1 15/36 A22H165 electrical characteristics 36 figure 38. thd+n vs. frequency, r l = 16 ? , out- of-phase, v cc = 3.6 v figure 39. thd+n vs. frequency, r l = 16 ? , in- phase, v cc = 4.8 v
electrical characteristics A22H165 16/36 docid026036 rev 1 figure 40. thd+n vs. frequency, r l = 16 ? , out- of-phase, v cc = 4.8 v figure 41. thd+n vs. frequency, r l = 32 ? , in- phase, v cc = 2.5 v figure 42. thd+n vs. frequency, r l = 32 ? , out- of-phase, v cc = 2.5 v figure 43. thd+n vs. frequency, r l = 32 ? , in- phase, v cc = 3.6 v
docid026036 rev 1 17/36 A22H165 electrical characteristics 36 figure 44. thd+n vs. frequency, r l = 32 ? , out- of-phase, v cc = 3.6 v figure 45. thd+n vs. frequency, r l = 32 ? , in- phase, v cc = 4.8 v figure 46. thd+n vs. frequency, r l = 32 ? , out- of-phase, v cc = 4.8 v figure 47. thd+n vs. frequency, r l = 47 ? , in- phase, v cc = 2.5 v
electrical characteristics A22H165 18/36 docid026036 rev 1 figure 48. thd+n vs. frequency, r l = 47 ? , out- of-phase, v cc = 2.5 v figure 49. thd+n vs. frequency, r l = 47 ? , in- phase, v cc = 3.6 v figure 50. thd+n vs. frequency, r l = 47 ? , out- of-phase, v cc = 3.6 v figure 51. thd+n vs. frequency, r l = 47 ? , in- phase, v cc = 4.8 v
docid026036 rev 1 19/36 A22H165 electrical characteristics 36 figure 52. thd+n vs. frequency, r l = 47 ? , out- of-phase, v cc = 4.8 v figure 53. psrr vs. frequency - v cc = 3.6 v, gain = 0 db figure 54. psrr vs. frequency - v cc = 3.6 v, gain = +6 db figure 55. output signal spectrum (v cc = 3.6 v, load = 32 ? )
electrical characteristics A22H165 20/36 docid026036 rev 1 figure 56. crosstalk vs. frequency - r l = 32 ? , v cc = 3.6 v, gain = 0 db figure 57. crosstalk vs. frequency - r l = 32 ? , v cc = 3.6 v, gain = +6 db figure 58. crosstalk vs. frequency - r l = 47 ? , v cc = 3.6 v, gain = 0 db figure 59. crosstalk vs. frequency - r l = 47 ? , v cc = 3.6 v, gain = +6 db
docid026036 rev 1 21/36 A22H165 electrical characteristics 36 figure 60. cmrr vs. frequency, 32 ? , v cc =36v, 0 db figure 61. cmrr vs. frequency, 32 ? , v cc =36v, 6 db figure 62. wake-up time figure 63. shutdown
application information A22H165 22/36 docid026036 rev 1 4 application information 4.1 gain control the A22H165 has two gain settings which are controlled via the gain pin: note: see table 6: electrical characte ristics of the amplifier for v ih and v il levels. 4.2 overview of the class-g, 2-level headphone amplifier the A22H165 uses what is referred to as class-g operating mode . this mode is a combination of the class ab biasing technique and an adaptive power supply. for this device, the power supply uses two levels: 1.2 v and 1.9 v. to create the 1.2 v and 1.9 v levels, the device uses an internal high-efficiency step- down converter linked with a fully capacitive inverter from av dd . thanks to these internally- generated symmetrical power supply voltages, t he output of the amplifier can be biased at 0 v, thus eliminating the classical bulky dc bloc king output capacitors (typically more than 100 ? f). figure 64. A22H165 architecture when an audio signal is playing with the a22h16 5, the class g feature adjusts in real time the internal power supply voltage in order to ac hieve the best efficiency possible. in addition, thanks to the fast transient response of the internal dc-dc converters, the switching between 1.2 v and 1.9 v can be achieved without audio clipping. moreover, the out-of- audio band dc-dc switching frequency keeps th e audio quality at a high level (distortion, noise, etc?). gain voltage amplifier gain ?? 0.6 v 0 db ?? 1.3 v 6 db c12 2.2 uf cs 2.2 uf css 2.2 uf ct 10 uf l1 3.3 uh vbat full capacitive inverter vout in+ in- 1.2 v to 1.9 v -1.2 v to -1.9 v 0 v +vout -vout level detector dc/dc control hpvdd pvss am06150
docid026036 rev 1 23/36 A22H165 application information 36 figure 65. efficiency comparison most audio signals have a crest factor higher than 6 db (10 db on average), which means that most of the time the music level is low. in this case, the setting of the internal dc-dc converters is low (1.2 v) and in this way, helps to minimize the power dissipation. when the audio signal amplitude increases due to a peak or louder music, the setting of the internal dc-dc converters increases to 1.9 v , automatically increasing the output dynamic range. this 1.9 v value remains until the end of the decay time. figure 66 shows a music sample played at high levels. figure 66. class-g operating with a music sample note: hpvdd/pvss voltages are created intern ally by dc-dc converters. to avoid destruction of the A22H165 power amplifier, do not connect any external power supply on these pins. 0. 1 1 10 0. 1 1 10 100 class ab class g both channels enabled rl = 32 , f = 1 khz vcc = 3.6 v, ta = 25c crest factor = 3db efficiency (%) total output power (mw) hpvdd high 1.9v hpvdd low 1.2v pvss low -1.2v pvss high -1.9v music sample
application information A22H165 24/36 docid026036 rev 1 4.3 external co mponent selection the A22H165 requires few external passive components to operate correctly. each component is described in the following sections. 4.3.1 step-down inductor selection (l1) the A22H165 needs one inductor for the internal step-down dc-dc converter. this inductor must fit the following constraints: ? typical value: 2.2 h to 3.3 h (3.3 h is recommended) ? maximum current in operating mode: 400 ma ? minimum inductor value at maximum current: 1.5 h ? maximum inductor value at zero current: 4.3 h ? dc resistance: from 50 m ? up to 450 m ? table 7 shows the part number that should be used according to the inductor value. 4.3.2 step-down output capacitor selection (c t ) for the internal dc-dc step-down converter, the A22H165 needs one output capacitor. the three criteria for selecting the output capacitor are the range value of the capacitor including self tolerance, dc va riation and the minimum esr value, which is mandatory to avoid oscillation of the converter. therefor e the following constraints must be observed. ? typical capacitor value: 10 f at dc = 0 v ? maximum capacitor value: 12 f at dc = 0 v ? minimum capacitor value: 4.8 f at dc = 2 v ? voltage range across this capacitor: from 1.1 v to 2 v ? minimum dc esr value: 5 m ? a ceramic capacitor in a 0603-type package is also recommended because of its close placement to the A22H165, which makes it eas ier to minimize parasitic inductance and resistance that have a negative impact on the audio performance. table 7. recommended inductor manufacturer part number value murata lqm21pn3r3ngrd 3.3 h lqm2mpn3r3g0l 3.3 h lqm2mpn2r2g0l 2.2 h fdk mipsz2012d3r3 3.3 h mipsz2012d2r2 2.2 h table 8. recommended capacitors manufacturer part number value murata grm188r60j106me47 10 f, 6.3 v, x5r grm188r60j106me84 10 f, 6.3 v, x5r grm188r61e106me73 10 f, 25 v, x5r
docid026036 rev 1 25/36 A22H165 application information 36 4.3.3 full capacitive inverter ca pacitors selection (c12 and c ss ) two capacitors (c12 and c ss ) are needed for this internal dc-dc inverter. the three criteria for selecting these capaci tors are the range value of the capacitor including self tolerance, dc variation and the minimum esr to minimize power losses. ? typical capacitor value: 2.2 f +/-20 % ? voltage across these capacitors: from 1.1 v to 2 v ? minimum capacitor value: 1 f again, a ceramic capacitor in a 0603 or 0402- type package is also recommended because of their close placement to th e A22H165, which makes it easier to minimize parasitic inductance and resistance that have a ne gative impact on the audio performance. 4.3.4 power supply decoupl ing capacitor selection (cs) a 2.2 f decoupling capacitor with low esr is recommended for positive power supply decoupling. packages such as the 0402 or 0603 are also recommended because of their close placement to the A22H165, which makes it easier to minimize parasitic inductance. it is advised to choose a x5r diel ectric for capacitor tolerance, and a 10 v dc rating voltage for 4.8 v operations (or a 6.3 v dc rating voltage for 3.6 v operations), to take into consideration the ? c/ ? v variation of this type of ceramic capacitor. an important parameter is the rated voltage of the capacitor. a 2.2 f/6.3 v capacitor used at 4.8 v dc typically loses about 40 % of it s value. in fact, with a 4.8 v power supply voltage, the decoupling value is about 1.3 f instead of 2.2 f. because the decoupling capacitor influences the thd+n in the medium-to-high frequency region, this capacitor variation becomes deci sive. in addition, less decoupling means higher overshoots, which can be problematic if they reach the power su pply?s amr value (5.5 v). this is why, for a 2.2 f value, we recommend a 2.2 f/10 v, a 4.7 f/6.3 v or a ceramic capacitor with a low dc bias variation rated at 6.3 v. 4.3.5 input coupling capacitor selection (c in ) c in input coupling capacitors are mandatory for the A22H165?s operation. they block any dc component coming from the audio signal source. c in with r in form a first-order high-pass filter and the -3 db cut-off frequency is: r in is the single-ended input impedance that can be approximated at about r indiff /2. r in also depends on the gain setting. figure 10 provides the differential input impedance vs. gain. one can also see that r indiff is minimum for the maximum gain setting (that is, 6 db). therefore, in most cases, r in should be set to 6 db to calculate the minimum input capacitor c in . example: in this case and for a -3 db cut-off frequency of 20 hz, c in =0.64 f. the closest normalized value is 0.68 f but a 1 f capacitor is more suitable to take into consideration the capacitor tolerance +/-20 %. if the aim is to have the 20 hz at -1 db, the ca pacitor has to be multiplied by 1.96. as such, c in = 0.64 x 1.96 = 1.25 f. the closest normalized value would be 1.5 f or 2.2 f. fc 3db ? ?? 1 2 ? rin cin ? ? ? -------------------------------------------- =
application information A22H165 26/36 docid026036 rev 1 4.3.6 low-pass output filter (r out and c out ) and iec 61000-4-2 esd protection the A22H165 is designed to operate with a passi ve first-order low-pass filter (as shown in figure 1 ). this low-pass filter is mandatory to ensure correct operation of the A22H165 over the volume range and output capacitance range vs. load. r out must have a value of 12 ? minimum and c out a value of 0.8 nf minimum up to 100 nf maximum. values of 12 ? and 1 nf are a good starting point for a design to be able to drive a classic headphone (16 ? , 32 ? , 60 ? ) and the line-in of any hi -fi system or sound card. the cutoff frequency of this filter (12 ? and 1 nf) is approximately 13 mhz and clearly above the audio band. however, this output rc filter is also a part of the iec 61000-4-2 esd protection. in most cases, this rc filter is designed with transi ent absorbers and the final solution can be a discrete solution or an integrated solution. st microelectronics? portfolio has many integrated solutions for esd, but one dedicated to headphone amplifiers in particular: ipad (a) reference emif02-av01f3. to fit the iec 61000-4-2 standard, this audio line ipad can be added to the output of the A22H165 as shown in figure 67 . figure 67. typical application schematic with iec 61000-4-2 esd protection by adding this esd protection, the a22h1 65 complies with the iec 61000-4-2 level 4 standard on jack pins. our demonstration board has been tested using the same conditions a. copyright stmicroelectronics. 1 2 3 j1 cin 1 f cin 1 f cin 1 f cin 1 f c12 2.2 f cs 2.2 f css 2.2 f ct 10 f l1 3.3 h vbat positive left input positive right input + - + - negative supply positive supply agnd c1 c2 avdd inl- inl+ inr+ inr- voutl voutr cms level detector level detector sw hpvdd pvss negative right input negative left input a1 2 c 1 c a2 b2 gnd ipad am06151
docid026036 rev 1 27/36 A22H165 application information 36 as those outlined in the iec 61000-4-2 standard. results may differ depending on the layout of the pcb. ? 15 kv (air discharge) ? 8 kv (contact discharge) this ipad has an internal series resistor r out =15 ? +/-20 % and an output capacitor c out =3.2nf +/-25%. 4.3.7 integrated input low-pass filter the A22H165 has an integrated internal first-order low-pass filter with a -3 db cutoff. this integrated filter is present on each input and filters any out-of-band audio noise coming from the audio source. 4.4 single-ended input configuration the A22H165 can be used in a single-ended input configuration. inr- and inl- or inr+ and inl+ can be shorted to ground through input capacitors. all c in capacitors must have the same value to keep the same psrr performance as in a differential input configuration. figure 68 and figure 69 show how to connect the A22H165. note the ground connection of each input. to avoid psrr issues resulting fr om any ground noise, this connection must be done on the ground of the audio source an d not on the ground of the A22H165 itself. figure 68. single-ended input configuration1 rout 12 ohms min. rout 12 ohms min. cout 0.8 nf min. cout 0.8 nf min. cin 1 f cin 1 f cin 1 f cin 1 f 1 2 3 j1 c12 2.2 f cs 2.2 f css 2.2 f ct 10 f l1 3.3 h vbat + - + - negative supply positive supply agnd c1 c2 avdd inl- inl+ inr+ inr- voutl voutr cms level detector level detector sw hpvdd pvss audio driver left output right output audio driver ground am06152
application information A22H165 28/36 docid026036 rev 1 figure 69. single-ended input configuration 2 the gain range in these configurations remains unchanged and is given by: with reference to figure 69 , note that the absolute phase in the audio band is 180. 4.4.1 layout recommendations for single-ended operation the connection location of each input that has to be set to ground is extremely important. rout 12 ohms min. rout 12 ohms min. cout 0.8 nf min. cout 0.8 nf min. cin 1 f cin 1 f cin 1 f cin 1 f 1 2 3 j1 c12 2.2 f cs 2.2 f css 2.2 f ct 10 f l1 3.3 h vbat + - + - negative supply positive supply agnd c1 c2 avdd inl- inl+ inr+ inr- voutl voutr cms level detector level detector sw hpvdd pvss audio driver left output right output audio driver ground am06153 voutlr vinlr gain ? =
docid026036 rev 1 29/36 A22H165 application information 36 incorrect connection location figure 70. incorrect ground connection for single-ended option if these inputs are connected to agnd (the ground of the A22H165 class-g), the output voltage can be expressed by the following simp lified equation from an ac point of view. equation 1 v out =avx(v audio +v mc +v gndnoise )+v batnoise x psrr as shown in equation 1 , any ground noise and any parasitic ac voltage on v mc is directly multiplied by the gain of the amplifier. if v mc can be totally controlled by the design of the audio source device (no parasitic ac voltag e), it is not necessarily the case for v gndnoise . this noise can be significantly reduced by an adequate low impedance ground plane, but not totally eliminated. in practice, only ten m illivolts in the right fr equency range are enough to produce an audible parasitic sound in the headphone with a volume level as low as -20 db. rout 12 ohms min. rout 12 ohms min. cout 0.8 nf min. cout 0.8 nf min. cin 1 f cin 1 f cin 1 f cin 1 f 1 2 3 j1 c12 2.2 f cs 2.2 f css 2.2 f ct 10 f l1 3.3 h vbat + - + - negative supply positive supply agnd c1 c2 avdd inl- inl+ inr+ inr- voutl voutr cms level detector level detector sw hpvdd pvss audio driver left output right output vgndnoise vaudiol vaudior vmc am06154
application information A22H165 30/36 docid026036 rev 1 correct connection location as shown in figure 71 , the best option is to route the single-ended signal in parallel with the ac ground line of the other input. the ac grounded terminal must be routed in parallel to the audio signal and grounded with the ground of the audio source. figure 71. correct ground connection for single-ended option in this configuration, the ac output voltage is: equation 2 v out = av x (vaudio + vmc) + vgndnoise x cmrr + vbatnoise x psrr in equation 2 the ground noise is attenuated by the performance of the cmrr. in practice, 50 db of cmrr and ten millivolts for ground no ise gives an output of approximately 30 v, which is normally too low to be perc eptible in the headphone. if v mc is also totally controlled by the design of the audio source, equation 2 becomes: equation 3 v out = av x vaudio + vbatnoise x psrr like in differential mode, the main contributo r for audio signal degradation is the ac noise voltage on v bat . thanks to the A22H165?s very high psrr that can attenuate gsm burst noise, equation 3 becomes: equation 4 v out = av x vaudio rout 12 ohms min. rout 12 ohms min. cout 0.8 nf min. cout 0.8 nf min. cin 1 f cin 1 f cin 1 f cin 1 f 1 2 3 j1 c12 2.2 f cs 2.2 f css 2.2 f ct 10 f l1 3.3 h vbat + - + - negative supply positive supply agnd c1 c2 avdd inl- inl+ inr+ inr- voutl voutr cms level detector level detector sw hpvdd pvss audio driver left output right output vgndnoise vaudiol vaudior vmc am06155
docid026036 rev 1 31/36 A22H165 application information 36 4.5 startup phase the A22H165 uses different techniques to reduce the dc current consumption and offer a pop-and-click performance close to none. 4.5.1 auto zero technology during the startup phase, the differential ou tput voltage is sensed and adjusted to 0 v (+/-500 ? v) to avoid any pop noise when the amplif ier becomes operational. this also helps to minimize extra current consumption due to the load (icc-extra = voutdc / rload). 4.5.2 input impedance the A22H165 requires input coupling capacitors. the usual lowest frequency used for the headphone is close to 20 hz. this frequency m eans a constant time for a first-order high- pass filter of approximately 1 / (2 x pi x 20) = 8 ms. to achieve 95 % of the capacitor?s charge, it is necessary to wait 3 x 8 ms = 24 ms, which is out of range for a device with a fast startup time. because of the mismatching of all input capacitors and input resistor s, if it is decided to start the A22H165 at a time of 8 ms, a voltage difference at the inputs (multiplied by the gain) can create a voltage step on the output and consequently a pop noise. to avoid this issue during the starting phase , the A22H165 accelerates the charging of the input capacitors by reducing the input impedance to 2 k ? . in such a case, for a 1 ? f capacitor the 95 % charge is reached in 6 ms. as the startup time of A22H165 is 12 ms, there remains sufficient time to fully charge the input capacitors and as such eliminate any pop noise. 4.6 layout recommendations particular attention must be given to the corr ect layout of the pcb tr aces and wires between the amplifier, load and power supply (in most cases, the battery of the cellular phone). the power and ground traces are critical si nce they must provide adequate energy and grounding for all circuits. good practice is to use short and wide pcb traces to minimize voltage drops and parasitic inductance. a track with a width of at least 200 ? m for a copper thickness of 18 ? m is recommended for bringing energy to the amplifier from the battery. proper grounding guidelines help improve audio performances, minimize crosstalk between channels, and prevent switching noise from co upling into the audio signal. it is also recommended to use a large-area and multi-via ground plane to minimize parasitic impedance. a multi-layer pcb board allows double or multiple ground planes to be implemented. most of the time, the top and bottom layers are us ed as ground planes and provide shielding for tracks routed on the intermediate layers. in add ition, to minimize pa rasitic impedance over the entire surface, a multi-via technique th at connects the bottom and top layer ground planes together in many locations is often used. the copper traces that connect the output pins to the load and supply pins should be as wide as possible to minimize the trace resistances.
application information A22H165 32/36 docid026036 rev 1 4.6.1 common-mode sense layout the A22H165 implements a common-mode sense pin to correct any voltage differences that might occur between the return of the headphone jack and the agnd of the device that can create parasitic noise in the headphone and/or line out. the solution to strongly reduce and practically eliminate this noise consists in connecting the headphone jack ground to the cms pin. this pin senses the difference of potential (voltage noise) between the A22H165 ground and the headphone ground. thanks to the frequency response and the attenuation of the common-mode sense pin, this noise is removed from the A22H165 outputs. figure 72. common-mode sense layout example common mode sense pin output jack connector ground plane
docid026036 rev 1 33/36 A22H165 package information 36 5 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. figure 73. A22H165 footprint recommendation figure 74. pinout 150 m min. 400 m 400 m 400 m 400 m pcb pad size: = 260 m maximum = 220 m recommended 75 m min. 100 m max. trac k not soldered mask opening solder mask opening: = 300 m min (for 260 m diameter pad) pad in cu 18 m with flash niau (2-6 m, 0.2 m max.) top view bottom view avdd sw inl- c1 cms en agnd c2 hpvdd voutl voutr inl+ inr+ pvss gain inr- 4321 a b c d c1 c2 hpvdd avdd agnd pvss cms voutr voutl inl+ inr+ inl- inr- gain en sw 1234 a b c d
package information A22H165 34/36 docid026036 rev 1 figure 75. marking (top view) figure 76. flip-chip - 16 bumps figure 77. device orientation in tape pocket ? logo: st ? symbol for lead-free: e ? part number: 21 ? x digit: assembly code ? date code: yww ? the dot marks pin a1 21x yww e 21x yww e 400 m 400 m 1650 m 600 m 1650 m ? die size: 1.65 mm x 1.65 mm 30 m ? die height (including bumps): 600 m 55 m ? bump diameter: 250 m 40 m ? bump height: 205 m 35 m ? die height: 395 m 20 m ? pitch: 400 m 40 m ? coplanarity: 50 m max 4 1.5 user direction of feed 8 die size x + 70 m die size y + 70 m 4 all dimensions are in mm a 1 a 1
docid026036 rev 1 35/36 A22H165 revision history 36 6 revision history table 9. document revision history date revision changes 06-mar-2014 1 initial release.
A22H165 36/36 docid026036 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems wi th product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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